PART |
Description |
Maker |
M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M52 |
262144-BIT CMOS STATIC RAM Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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M5M5256DFP-70G M5M5256DFP-70GI M5M5256DVP-70G M5M5 |
32K X 8 STANDARD SRAM, 70 ns, PDSO28 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM Memory>Low Power SRAM
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Renesas Electronics Corporation
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GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM 262,144 WORD x 4 BIT CMOS DYNAMIC RAM
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GoldStar LG[LG Semicon Co.,Ltd.]
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M5M44260CJ M5M44260CJ-5 M5M44260CJ-5S M5M44260CJ-6 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CXK77V3211Q-12 CXK77V3211Q-14 |
32768-word by 32-bit High Speed Synchronous Static
|
SONY
|
M66287FP |
262144-word x 8-bit x 3-FIELD MEMORY
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M66288FP |
262144-word x 8-bit x 3-FIFO MEMORY
|
Renesas Electronics Corporation
|
M5M5W416CWG-85HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
M5M5V416CWG-85HI |
4194304-bit (262144-word by 16-bit) CMOS static RAM
|
Mitsubishi Electric Corporation
|
M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation http://
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